1 UT4N60F n-ch 600v fast switching mosfets id 600v ? 4a the UT4N60F is the highest performance trench p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UT4N60F meet the rohs and green product requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data to220f pin configuration product summery bv rd dss s(on) 2.2 symbol parameter to220f unites v dss drain-source voltage 600 v drain current -continuous (tc=25) 4 a -continuous (tc=100) 2.8 a i dm drain current - pulse d (note1) 16 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note2) 8.8 mj dv/dt peak diode recovery dv/dt (note3) 4.5 v/ns power dissipation (tc=25) 33 w - derate above 25 0.26 w/ t j1 t stg operating and storage tem perature range -55-150 t l maximum lead temperature for soldering purposes, 1/8" from case for seconds 300 i d p d symbol parameter type max units r jc thermal resistance, jun ction-to-case -- 3.8 /w r ja thermal resistance, junct ion-to-ambient -- 6.5 /w g d s
2 electrical characteristics (t j =25 , unless otherwise noted) n-ch 600v fast switching mosfets UT4N60F
3 n-ch 600v fast switching mosfets gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms UT4N60F
4 n-ch 600v fast switching mosfets gate charge test circuit & waveform UT4N60F
gate charge test circuit & waveform n-ch 600v fast switching mosfets 5 UT4N60F
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